Electrical parameters have been measured using a 2.2 µF output capacitor. TJ=-40°C to 105°C, VBAT=0.8 V to 3.4 V and TJ=25°C, VBAT=1.25 V for typical values (unless otherwise noted).
| Symbol | Description | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VLDOSWPROG | Output voltage range | 0.8 to 3 | V | ||
| VLDOSWSTEP | Output voltage step (register setting) | 50 | mV | ||
| VLDOSWACC | Output voltage accuracy, High Power mode excluding transients | -3 | 3 | % | |
| VLDOSWDROPHP | Drop-out voltage, High Power mode (VLDOSW=1.8 V) | 300 | mV | ||
| VLDOSWDROPLP | Drop-out voltage, Ultra-Low Power mode (VLDOSW=1.8 V) | 400 | mV | ||
| IVLDOSWLDO | Output current, High Power mode | 50 | mA | ||
| IVLDOSWLDO_ULP | Output current, Ultra-Low Power mode (drop-out voltage=600 mV) | 2 | mA | ||
| IQLDOSW_LDO_HPLP | Quiescent current, High Power mode (no load, BOOST in Low Power/Ultra-Low Power mode, VBAT=1.5 V) - additional to chip's consumption | 1900 | µA | ||
| IQLDOSW_LDO_HP | Quiescent current, High Power mode (no load, BOOST in High Power mode, VBAT=1.5 V) - additional to chip's consumption | 60 | µA | ||
| IQLDOSW_LDO_ULP | Quiescent current, Ultra-Low Power mode (no load, BOOST in Ultra-Low Power mode, VBAT=1.5 V) - additional to chip's consumption | 0.6 | µA | ||
| VLDOSWLDTR | Load transient (1 mA to 40 mA in 10 µs), High Power mode | 50 | mV | ||
| VLDOSWLNTR | Line transient (300 mV in 10 µs), both modes | 25 | mV | ||
| VLDOSWPSRR | Power supply rejection ratio, High Power mode (1 Hz to 10 kHz) | 30 | dB | ||
| CLDOSW_LDO | Effective capacitance on LSOUT/VOUTLDO pin | 0.7 | 12 | µF | |
| VLDOSWPD | Pull-down resistor | 2 | kΩ |