TJ=-40°C to 105°C, VBAT=0.8 V to 3.4 V and TJ=25°C, VBAT=1.25 V for typical values (unless otherwise noted).
| Symbol | Description | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| RONLDOSW_SW | RON, High Power mode (1.8 V, OCP disabled) | 500 | mΩ | ||
| RONLDOSW_SW_ULP | RON, Ultra-Low Power mode | 40 | Ω | ||
| ILDOSWSW | Output current, High Power mode | 50 | mA | ||
| ILDOSWSW_ULP | Output current, Ultra-Low Power mode | 2 | mA | ||
| IQLDOSW_SW_HPLP | Quiescent current, High Power mode (no load, BOOST in Low Power/Ultra-Low Power mode, VBAT=1.5 V) - additional to chip's consumption | 1800 | µA | ||
| IQLDOSW_SW_HP | Quiescent current, High Power mode (no load, BOOST in High Power mode, VBAT=1.5 V) - additional to chip's consumption | 50 | µA | ||
| IQLDOSW_SW_ULP | Quiescent current, Ultra-Low Power mode (no load, BOOST in Ultra-Low Power mode, VBAT=1.5 V) - additional to chip's consumption | 20 | nA | ||
| VLDOSWPD | Pull-down resistor | 2 | kΩ |